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publication date : september 2012 1 < igbt modules > CM35MXA-24S high power switching use insulated type collector current i c .............?.......................? 35 a collector-emitter voltage v ces ......................? 1200 v maximum junction temperature t jmax .............. 175 c flat base type copper base plate tin plating pin terminals rohs directive compliant cib (converter+inverter+chopper brake) recognized under ul1557, file e323585 application ac motor control, motion/servo control, power supply, etc. outline drawing & internal connection dimension in mm terminal t=0.8 section a internal connection tolerance otherwise specified division of dimension tolerance 0.5 to 3 0.2 over 3 to 6 0.3 over 6 to 30 0.5 over 30 to 120 0.8 over 120 to 400 1.2 p 1(48~49) n1(44~45) gup(13) u(14~15) gun(40) th1(29) th2(28) gvp(18) v(19~20) gvn(33) gw p (23) w(24~2 5 ) g wn(31) b(52~53) gb(41) ntc clampdi p(54~56) n(59~61) r(1~2) s(5~6) t( 9 ~10) es(32) es'(39) caution: each (two or three) pin terminal of p/n/p1/n1/u/v/w/b/r/s/t is connected in the module, but should use all each three pins for the external wiring. the tolerance of size between terminals is assumed to be 0.4.
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 2 absolute maximum ratings (t j =25 c, unless otherwise specified) inverter part igbt/fwdi symbol item conditions rating unit v ces collector-emitter voltage g-e short-circuited 1200 v v ges gate-emitter voltage c-e short-circuited 20 v i c dc, t c =125 c (note2, 4) 35 i crm collector current pulse, repetitive (note3) 70 a p tot total power dissipation t c =25 c (note2, 4) 355 w i e (note1) (note2) 35 i erm (note1) emitter current pulse, repetitive (note3) 70 a t jmax maximum junction temperature instantaneous event (overload) 175 c brake part igbt/clampdi symbol item conditions rating unit v ces collector-emitter voltage g-e short-circuited 1200 v v ges gate-emitter voltage c-e short-circuited 20 v i c dc, t c =125 c (note2, 4) 35 i crm collector current pulse, repetitive (note3) 70 a p tot total power dissipation t c =25 c (note2, 4) 355 w v rrm repetitive peak reverse voltage g-e short-circuited 1200 v i f (note2) 35 i frm forward current pulse, repetitive (note3) 70 a t jmax maximum junction temperature instantaneous event (overload) 175 c converter part convdi symbol item conditions rating unit v rrm repetitive peak reverse voltage - 1600 v e a recommended ac input voltage rms 440 v i o dc output current 3-phase full wave rectifying, t c =125 c (note4) 35 a the sine half wave 1 cycle peak value, i fsm surge forward current f=60 hz, non-repetitive 350 a i 2 t current square time value for one cycle of surge current 510 a 2 s t jmax maximum junction temperature instantaneous event (overload) 150 c module symbol item conditions rating unit v isol isolation voltage terminals to base plate, rms, f=60 hz, ac 1 min 2500 v t cmax maximum case temperature (note4) 125 c t jop operating junction temperature continuous operation (under switching) -40 ~ +150 t stg storage temperature - -40 ~ +125 c mechanical characteristics limits symbol item conditions min. typ. max. unit m s mounting torque mounting to heat sink m 5 screw 2.5 3.0 3.5 nm terminal to terminal 6.47 - - d s creepage distance terminal to base plate 14.27 - - mm terminal to terminal 6.47 - - d a clearance terminal to base plate 12.33 - - mm m weight - - 300 - g e c flatness of base plate on the centerline x, y (note5) 0 - +100 m
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 3 electrical characteristics (t j =25 c, unless otherwise specified) inverter part igbt/fwdi limits symbol item conditions min. typ. max. unit i ces collector-emitter cut-off current v ce =v ces , g-e short-circuited - - 1.0 ma i ges gate-emitter leakage current v ge =v ges , c-e short-circuited - - 0.5 a v ge(th) gate-emitter threshold voltage i c =3.5 ma, v ce =10 v 5.4 6.0 6.6 v i c =35 a (note6) , t j =25 c - 1.80 2.25 v ge =15 v, t j =125 c - 2.00 - (terminal) t j =150 c - 2.05 - v i c =35 a (note6) , t j =25 c - 1.70 2.15 v ge =15 v, t j =125 c - 1.90 - v cesat collector-emitter saturation voltage (chip) t j =150 c - 1.95 - v c ies input capacitance - - 3.5 c oes output capacitance - - 0.7 c res reverse transfer capacitance v ce =10 v, g-e short-circuited - - 0.06 nf q g gate charge v cc =600 v, i c =35 a, v ge =15 v - 82 - nc t d(on) turn-on delay time - - 300 t r rise time v cc =600 v, i c =35 a, v ge =15 v, - - 200 t d(off) turn-off delay time - - 600 t f fall time r g =18 ? , inductive load - - 300 ns i e =35 a (note6) , t j =25 c - 1.80 2.25 g-e short-circuited, t j =125 c - 1.80 - (terminal) t j =150 c - 1.80 - v i e =35 a (note6) , t j =25 c - 1.70 2.15 g-e short-circuited, t j =125 c - 1.70 - v ec (note1) emitter-collector voltage (chip) t j =150 c - 1.70 - v t rr (note1) reverse recovery time v cc =600 v, i e =35 a, v ge =15 v, - - 300 ns q rr (note1) reverse recovery charge r g =18 ? , inductive load - 1.9 - c e on turn-on switching energy per pulse v cc =600 v, i c =i e =35 a, - 4.2 - e off turn-off switching energy per pulse v ge =15 v, r g =18 ? , t j =150 c, - 3.7 - mj e rr (note1) reverse recovery energy per pulse inductive load - 3.5 - mj main terminals-chip, per switch, r cc'+ee' internal lead resistance t c =25 c (note4) - - 5.7 m ? r g internal gate resistance per switch - 0 - ? brake part igbt/clampdi limits symbol item conditions min. typ. max. unit i ces collector-emitter cut-off current v ce =v ces , g-e short-circuited - - 1.0 ma i ges gate-emitter leakage current v ge =v ges , c-e short-circuited - - 0.5 a v ge(th) gate-emitter threshold voltage i c =3.5 ma, v ce =10 v 5.4 6.0 6.6 v i c =35 a (note6) , t j =25 c - 1.80 2.25 v ge =15 v, t j =125 c - 2.00 - (terminal) t j =150 c - 2.05 - v i c =35 a (note6) , t j =25 c - 1.70 2.15 v ge =15 v, t j =125 c - 1.90 - v cesat collector-emitter saturation voltage (chip) t j =150 c - 1.95 - v c ies input capacitance - - 3.5 c oes output capacitance - - 0.7 c res reverse transfer capacitance v ce =10 v, g-e short-circuited - - 0.06 nf q g gate charge v cc =600 v, i c =35 a, v ge =15 v - 82 - nc
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 4 electrical characteristics (cont.; t j =25 c, unless otherwise specified) brake part igbt/clampdi limits symbol item conditions min. typ. max. unit t d(on) turn-on delay time - - 300 t r rise time v cc =600 v, i c =35 a, v ge =15 v, - - 200 t d(off) turn-off delay time - - 600 t f fall time r g =18 ? , inductive load - - 300 ns i f =35 a (note6) , t j =25 c - 1.80 2.25 g-e short-circuited, t j =125 c - 1.80 - (terminal) t j =150 c - 1.80 - v i f =35 a (note6) , t j =25 c - 1.70 2.15 g-e short-circuited, t j =125 c - 1.70 - v f forward voltage (chip) t j =150 c - 1.70 - v t rr reverse recovery time v cc =600 v, i f =35 a, v ge =15 v, - - 300 ns q rr reverse recovery charge r g =18 ? , inductive load - 1.9 - c e on turn-on switching energy per pulse v cc =600 v, i c =i f =35 a, - 4.2 - e off turn-off switching energy per pulse v ge =15 v, r g =18 ? , t j =150 c, - 3.7 - mj e rr reverse recovery energy per pulse inductive load - 3.5 - mj r g internal gate resistance - - 0 - ? converter part convdi limits symbol item conditions min. typ. max. unit i rrm repetitive peak reverse current v r =v rrm , t j =150 c - - 4.0 ma v f (terminal) forward voltage i f =35 a (note6) - 1.2 1.6 v ntc thermistor part limits symbol item conditions min. typ. max. unit r 25 zero-power resistance t c =25 c (note4) 4.85 5.00 5.15 k ? ? r/r deviation of resistance r 100 =493 ? , t c =100 c (note4) -7.3 - +7.8 % b (25/50) b-constant approximate by equation (note7) - 3375 - k p 25 power dissipation t c =25 c (note4) - - 10 mw thermal resistance characteristics limits symbol item conditions min. typ. max. unit r th(j-c)q junction to case, per inverter igbt - - 0.42 r th(j-c)d junction to case, per inverter fwdi - - 0.69 k/w r th(j-c)q junction to case, per brake igbt - - 0.42 r th(j-c)d junction to case, per brake clampdi - - 0.69 k/w r th(j-c)d thermal resistance (note4) junction to case, per converter convdi - - 0.45 k/w case to heat sink, per 1 module, r th(c-s) contact thermal resistance (note4) thermal grease applied (note8) - 15 - k/kw
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 5 note1. represent ratings and characteristics of the anti- parallel, emitter-collector free wheeling diode (fwdi). 2. junction temperature (t j ) should not increase beyond t jmax rating. 3. pulse width and repetition rate should be such that the device junction temperature (t j ) dose not exceed t jmax rating. 4. case temperature (t c ) and heat sink temperature (t s ) are defined on the each surface (mounti ng side) of base plate and heat sink just under the chips. refer to the figure of chip location. 5. the base plate (mounting side) flatness measurement poi nts (x, y) are as follows of the following figure. y x +:convex -:concave +:convex -:concave mounting side mounting side mounting side 6. pulse width and repetition rate should be such as to cause negligible temperature rise. refer to the figure of test circuit. 7. ) t t /( ) r r ln( b ) / ( 50 25 50 25 50 25 1 1 ? ? , r 25 : resistance at absolute temperature t 25 [k]; t 25 =25 [c]+273.15=298.15 [k] r 50 : resistance at absolute temperature t 50 [k]; t 50 =50 [c]+273.15=323.15 [k] 8. typical value is measured by us ing thermally conductive grease of =0.9 w/(mk). 9. use the following screws when mounting the pr inted circuit board (pcb) on the stand offs. "st2.610 or st2.612 self tapping screw" the length of the screw depends on the thickness of the pcb. recommended operating conditions limits symbol item conditions min. typ. max. unit v cc (dc) supply voltage applied across p-n/p1-n1 terminals - 600 850 v v geon gate (-emitter drive) voltage applied across gb-es/ g*p-*/g*n-es(*=u, v, w) terminals 13.5 15.0 16.5 v inverter igbt 18 - 180 r g external gate resistance per switch brake igbt 18 - 180 ?
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 6 chip location (top view) dimension in mm, tolerance: 1 mm tr*p/tr*n/trbr: igbt, di*p/di*n: fwdi (*=u/v/w), dibr: clampdi, cr*p/cr*n: co nvdi (*=r/s/t), th: ntc thermistor test circuit and waveforms t t f t r t d(o n) i c 10% 90 % 90 % v ge v cc r g -v ge +v ge -v ge load 0 v 0 a + 0 v ce v ge 0 v t d(off) t i e i c p1 n1 * g*p g*n es *:u, v, w i rr q rr =0.5i rr t rr 0.5i rr t t rr i e 0 a i e switching characteristics test circuit and waveforms t rr , q rr test waveform 0.1i cm i cm v cc v ce i c t 0 t i 0.1v cc 0.1v cc v cc i cm v ce i c t 0 0.02i cm t i i em v ec i e t 0 v t i t v cc 0 a igbt turn-on switching energy igbt turn-off switching energy fwdi reverse recovery energy turn-on / turn-off switching energy and reverse recovery energy test waveforms (integral time instruction drawing)
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 7 test circuit i c 14/15 44/45 32 40 13 v short- circuited 48/49 v ge =15 v i c 19/20 44/45 32 33 18 v short- circuited 48/49 v ge =15 v i c 24/25 44/45 32 31 23 v short- circuited 48/49 v ge =15 v i c b n1 es gb p1 v ge =15 v v i c u n1 es gun gup v short- circuited p1 v ge =15 v i c v n1 es gvn gvp v short- circuited p1 v ge =15 v i c w n1 es gwn gwp v short- circuited p1 v ge =15 v i f 52/53 44/45 32 41 48/49 v short- circuited g-e short-circuited gvp-v, gvn-es, gwp-w, gwn-es, gb-es g-e short-circuited gup-u, gun-es, gwp-w, gwn-es, gb-es g-e short-circuited gup-u, gun-es, gvp-v, gvn-es, gb-es g-e short-circuited gup-u, gun-es, gvp-v, gvn-es, gwp-w, gwn-es up / un igbt vp / vn igbt wp / wn igbt brake igbt / clampdi v cesat / clampdi v f test circuit i e 14/15 44/45 32 40 13 v short- circuited 48/49 short- circuited i e 19/20 44/45 32 33 18 v short- circuited 48/49 short- circuited i e 24/25 44/45 32 31 23 v short- circuited 48/49 short- circuited i f 1/2 59 / 60/61 54/55/56 v i e u n1 es gun gup v short- circuited p1 short- circuited i e v n1 es gvn gvp v short- circuited p1 short- circuited i e w n1 es gwn gwp v short- circuited p1 short- circuited i f r n p v g-e short-circuited gvp-v, gvn-es, gwp-w, gwn-es, gb-es g-e short-circuited gup-u, gun-es, gwp-w, gwn-es, gb-es g-e short-circuited gup-u, gun-es, gvp-v, gvn-es, gb-es up / un fwdi vp / vn fwdi wp / wn fwdi convdi (ex. phase-r) v ec / convdi v f test circuit * in the above test circuit, should use all three main pin termin als (p1/n1/p/n/u/v/w) for connection with the terminals and th e current source.
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 8 performance curves inverter part output characteristics (typical) collector-emitter saturation voltage characteristics (typical) t j =25 c (chip) v ge =15 v (chip) collector current i c (a) 0 10 20 30 40 50 60 70 0246810 collector-emitter saturation voltage v ce (v) 0 0.5 1 1.5 2 2.5 3 3.5 0 10203040506070 collector-emitter voltage v ce (v) collector current i c (a) collector-emitter saturation voltage characteristics (typical) free wheeling diode forward characteristics (typical) t j =25 c (chip) g-e short-circuited (chip) collector-emitter saturation voltage v ce (v) 0 2 4 6 8 10 6 8 10 12 14 16 18 20 emitter current i e (a) 1 10 100 00.511.522.53 gate-emitter voltage v ge (v) emitter-collector voltage v ec (v) t j =150 c t j =125 c t j =25 c t j =150 c t j =25 c i c =70 a i c =35 a i c =14 a v ge =20 v 12 v 11 v 10 v 9 v 13.5 v 15 v t j =125 c
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 9 performance curves inverter part half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =600 v, v ge =15 v, r g =18 ? , inductive load --------------- : t j =150 c, - - - - -: t j =125 c v cc =600 v, v ge =15 v, i c =35 a, inductive load --------------- : t j =150 c, - - - - -: t j =125 c switching time (ns) 1 10 100 1000 1 10 100 switching time (ns) 10 100 1000 10 100 1000 collector current i c (a) external gate resistance r g ( ? ) half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =600 v, v ge =15 v, r g =18 ? , inductive load, per pulse --------------- : t j =150 c, - - - - -: t j =125 c v cc =600 v, v ge =15 v, i c =35 a, inductive load, per pulse --------------- : t j =150 c, - - - - -: t j =125 c switching energy (mj) 0.1 1 10 100 1 10 100 0.01 0.1 1 10 reverse recovery energy (mj) switching energy (mj) reverse recovery energy (mj) 1 10 100 10 100 1000 collector current i c (a) emitter current i e (a) external gate resistance r g ( ? ) e on e off e rr t d(on) t r t f t d(off) e on e off e rr t d(on) t r t f t d(off)
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 10 performance curves inverter part capacitance characteristics (typical) free wheeling diode reverse recovery characteristics (typical) g-e short-circuited, t j =25 c v cc =600 v, v ge =15 v, r g =18 ? , inductive load --------------- : t j =150 c, - - - - -: t j =125 c capacitance (nf) 0.01 0.1 1 10 0.1 1 10 100 t rr (ns), i rr (a) 10 100 1000 1 10 100 collector-emitter voltage v ce (v) emitter current i e (a) gate charge characteristics (typical) transient thermal impedance characteristics (maximum) v cc =600 v, i c =35 a, t j =25 c single pulse, t c =25 c r th(j-c)q =0.42 k/w, r th(j-c)d =0.69 k/w gate-emitter voltage v ge (v) 0 5 10 15 20 0 50 100 150 normalized transient thermal resistance z th(j-c) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 gate charge q g (nc) time (s) t rr i rr c ies c oes c res
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 11 performance curves brake part collector-emitter saturation voltage characteristics (typical) clamp diode forward characteristics (typical) v ge =15 v (chip) g-e short-circuited (chip) collector-emitter saturation voltage v cesat (v) 0 0.5 1 1.5 2 2.5 3 3.5 0 10203040506070 forward voltage v f (v) 1 10 100 00.511.522.53 collector current i c (a) forward current i f (a) half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =600 v, v ge =15 v, r g =18 ? , inductive load --------------- : t j =150 c, - - - - -: t j =125 c v cc =600 v, i c =35 a, v ge =15 v, inductive load --------------- : t j =150 c, - - - - -: t j =125 c switching time (ns) 1 10 100 1000 1 10 100 switching time (ns) 10 100 1000 10 100 1000 collector current i c (a) external gate resistance r g ( ? ) t j =150 c t j =125 c t j =25 c t j =150 c t j =125 c t j =25 c t d(on) t r t f t d(off) t d(on) t r t f t d(off)
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 12 performance curves brake part half-bridge switching characteristics (typical) half-bridge switching characteristics (typical) v cc =600 v, v ge =15 v, r g =18 ? , inductive load, per pulse --------------- : t j =150 c, - - - - -: t j =125 c v cc =600 v, i c /i f =35 a, v ge =15 v, inductive load, per pulse --------------- : t j =150 c, - - - - -: t j =125 c switching energy (mj) 0.1 1 10 100 1 10 100 0.01 0.1 1 10 reverse recovery energy (mj) switching energy (mj) reverse recovery energy (mj) 1 10 100 10 100 1000 collector current i c (a) forward current i f (a) external gate resistance r g ( ? ) clamp diode reverse recovery characteristics (typical) transient thermal impedance characteristics (maximum) v cc =600 v, v ge =15 v, r g =18 ? , inductive load --------------- : t j =150 c, - - - - -: t j =125 c single pulse, t c =25 c r th(j-c)q =0.42 k/w, r th(j-c)d =0.69 k/w t rr (ns), i rr (a) 10 100 1000 1 10 100 normalized transient thermal resistance z th(j-c) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 forward current i f (a) time (s) e on e off e rr e on e off e rr i rr t rr
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 13 performance curves converter part converter diode forward characteristics (typical) transient thermal impedance characteristics (maximum) single pulse, t c =25 c r th(j-c)d =0.45 k/w forward current i f (a) 1 10 100 0.4 0.6 0.8 1 1.2 1.4 1.6 normalized transient thermal resistance z th(j-c) 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 forward voltage v f (v) time (s) ntc thermistor part temperature characteristics (typical) resistance r (k ? ) 0.1 1 10 100 -50 -25 0 25 50 75 100 125 temperature t (c) t j =125 c t j =25 c
< igbt modules > CM35MXA-24S high power switching use insulated type publication date : september 2012 14 keep safety first in your circuit designs! mitsubishi electric corporation puts the maximum effo rt into making semiconductor products better and more reliable, but there is alwa ys the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appr opriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials ?these materials are intended as a reference to assist our customers in the selection of the mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any ot her rights, belonging to mitsubishi elec tric corporation or a third party. ?mitsubishi electric corporation assumes no res ponsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples c ontained in these materials. ?all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents information on products at the time of publication of these materials, and are subject to change by mitsubishi electric cor poration without notice due to product improvements or other reasons. it is therefore recommended that cust omers contact mitsubishi electric corporation or an authorized mitsubishi semiconductor product distri butor for the latest product info rmation before pur chasing a product listed herein. the information described here may contain technica l inaccuracies or typographical errors. mitsubishi electric corporation assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies or errors. please also pay attention to inform ation published by mitsubishi electr ic corporation by various means, including the mitsubishi semiconductor home page (www.mitsubishielectri c.com/semiconductors/). ?when using any or all of the information contained in these materials, includi ng product data, diagrams, charts, programs, and algorithms, please be sure to ev aluate all information as a total system before making a final decision on the applic ability of the information and products. mitsubishi elec tric corporation assumes no responsibility for any damage, liab ility or other loss resulting from the information containedherein. ?mitsubishi electric corporation semiconductors are not designed or m anufactured for use in a device or system that is used under circumst ances in which human life is potent ially at stake. please contact mitsubishi electric corporation or an authorized mitsubishi semi conductor product distributor when considering the use of a product contained herein for any specific purposes, such as app aratus or systems for transportation, vehicular, medical, aeros pace, nuclear, or undersea repeater use. ?the prior written approval of mitsubishi electric corporat ion is necessary to reprint or reproduce in whole or in part these materials. ?if these products or technologies ar e subject to the japanese export cont rol restrictions, they must be exported under a license from the ja panese government and cannot be impor ted into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulati ons of japan and/or the country of destination is prohibited. ?please contact mitsubishi electric corporation or an authorized mitsubishi semi conductor product distributor for further details on these material s or the products contained therein. ? 2012 mitsubishi electric corporation. all rights reserved.

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